12/8/2023 0 Comments Free download hemt![]() ![]() ![]() At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability. The GNP1070TC-Z and GNP1150TCA-Z deliver what is claimed to be industry-leading performance in terms of the GaN HEMT figure of merit R DS(ON) x C iss/R DS(ON) x C oss, translating to higher efficiency in power supply systems. Now, ROHM has developed 650V GaN HEMTs with performance that contributes to higher efficiency and smaller size in a wider range of power supply systems. The new products are jointly developed with Ancora Semiconductors Inc (an affiliate of global power and thermal management solutions provider Delta Electronics Inc), which was established in July 2022 to develop GaN devices and technology.Īfter initiating mass production of 150V GaN HEMTs (with a gate breakdown voltage of 8V) in 2022, in March ROHM established control IC technology for maximizing GaN performance. Japan-based power semiconductor maker ROHM Co Ltd has begun mass production of the 650V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) GNP1070TC-Z and GNP1150TCA-Z, which are optimized for a wide range of power supply systems in industrial equipment and consumer devices, including servers and AC adapters. ROHM begins mass production of 650V GaN HEMTs ![]()
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